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leshan radio comp any, ltd. s-lmbt4413dw1t1g thermal characteristics characteristic symbol ma x unit total device dissipation fr? 5 board, (1) p d 225 mw t a = 25c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 5 56 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 4 17 c/w junction and storage temperature t j ,t stg ?55 to +150 c 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. feature ? device marking and ordering information device marking shipping k13 3000/tape&reel 1 3 2 sot-363/sc-88 6 4 5 e 1 b 1 e 2 c 1 b 2 c 2 lmbt4413dw1t1g lmbt4413dw1t3g k13 10000/tape&reel mount transistor dual small signal surface maximum ra tings - npn maximum ra tings - pnp q 2 q 1 we declare that the material of product is rohs compliant and halogen free. 1 2 3 4 5 6 rating symbol v alue unit collector?emitter v oltage v ceo 40 vdc collector?base v oltage v cbo 60 vdc emitter?base v oltage v ebo 6.0 vd c collector current ? continuous i c 60 0 madc rating symbol v alue unit collector?emitter v oltage v ceo -40 vdc collector?base v oltage v cbo -60 vdc emitter?base v oltage v ebo -5.0 vd c collector current ? continuous i c -600 madc rev.o 1/11 lmbt4413dw1t1g ? s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. s-lmbt4413dw1t1g s-lmbt4413dw1t3g
leshan radio comp any, ltd. lmbt4413dw1t1g q1(npn) electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage (3) v (br)ceo vdc (i c = 1.0 madc, i b = 0) 40 ? collector?base breakdown voltage v (br)cbo vdc (i c = 0.1 madc, i e = 0) 60 ? emitter?base breakdown voltage v (br)ebo vdc (i e = 0.1 madc, i c = 0) 6.0 ? base cutoff current i bev adc (v ce = 35 vdc, v eb = 0.4 vdc) ? 0.1 collector cutoff current i cex adc (v ce = 35 vdc, v eb = 0.4 vdc) ? 0.1 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. pulse test: pulse width < 300 s; duty cycle < 2.0%. q2(pnp) off characteristics collector?emitter breakdown voltage (3) v (br)ceo vdc (i c = -1.0 madc, i b = 0) -40 ? collector?base breakdown voltage v (br)cbo vdc (i c = -0.1 madc, i e = 0) -60 ? emitter?base breakdown voltage v (br)ebo vdc (i e = -0.1 madc, i c = 0) -5.0 ? base cutoff current i bev adc (v ce = -35 vdc, v eb = -0.4 vdc) ? -0.1 collector cutoff current i cex adc (v ce = -35 vdc, v eb = -0.4 vdc) ? -0.1 rev.o 2/11 ;s-lmbt4413dw1t1g
leshan radio comp any, ltd. electrical characteristics (t a = 25c unless otherwise noted) characteristic symbol min max unit on characteristics ( 3 ) dc current gain h fe ?? (i c = 0.1 madc, v ce = 1.0 vdc) 20 ?? (i c = 1.0 madc, v ce = 1.0 vdc) 40 ?? (i c = 10 madc, v ce = 1.0 vdc) 80 ?? (i c = 150 madc, v ce = 1.0 vdc) 100 300 (i c = 500 madc, v ce = 2.0 vdc) 40 ?? collector?emitter saturation voltage v ce(sat) vdc (i c = 150 madc, i b = 15 madc) ?? 0.4 (i c = 500 madc, i b = 50 madc) ?? 0.75 base?emitter saturation voltage v be(sat) vdc (i c = 150 madc, i b = 15 madc) 0.75 0.95 (i c = 500 madc, i b = 50 madc) ?? 1.2 small?signal characteristics current?gain ? bandwidth product f t mhz (i c = 20 madc, v ce = 10vdc, f = 100 mhz) 250 ?? collector?base capacitance c cb pf (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) ?? 6.5 emitter?base capacitance c eb pf (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) ?? 30 input impedance h ie k ? (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) 1.0 15 voltage feedback ratio h re x 10 ?4 (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) 0.1 8.0 small?signal current gain h fe ? (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) 40 500 output admittance h oe mhos (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) 1.0 30 switching characteristics delay time (v cc = 30 vdc, v eb = 2.0 vdc t d ?15 rise time i c = 150 madc, i b1 = 15 madc) t r ?20ns storage time (v cc = 30 vdc, i c = 150 madc t s ? 225 ns fall time i b1 = i b2 = 15 madc) t f ?30 figure 1. turn?on time scope rise time < 4.0ns *total shunt capacitance of test jig connectors, and oscilloscope 1.0 k ? +30 v 200 ? c s *< 10 pf 1.0 k ? +30 v 200 ? c s * < 10 pf 1n916 + 16 v ?14 v < 20 ns <2.0 ns ? 2.0v + 16 v figure 2. turn?off time 1.0 to 100 s, duty cycle = 2% switching time equivalent test circuits (q1 npn) 0 0 1.0 to 100 s, duty cycle = 2% ? 4.0 v 3. pulse test: pulse width < 300 s; duty cycle < 2.0%. q1(npn) rev.o 3/11 lmbt4413dw1t1g ;s-lmbt4413dw1t1g
leshan radio comp any, ltd. electrical characteristics (t a = 25c unless otherwise noted) characteristic symbol min max unit on characteristics dc current gain h fe ?? (i c = ?0.1 madc, v ce = ?1.0 vdc) 30 ?? (i c = ?1.0 madc, v ce = ?1.0 vdc) 60 ?? (i c = ?10 madc, v ce = ?1.0 vdc) 100 ?? (i c = ?150 madc, v ce = ?2.0 vdc)(3) 100 300 (i c = ?500 madc, v ce = ?2.0 vdc)(3) 20 ?? collector?emitter saturation voltage(3) v ce(sat) vdc (i c = ?150madc, i b = ?15 madc) ?? ? 0.4 (i c = ?500 madc, i b = ?50 madc) ?? ? 0.75 base?emitter saturation voltage (3) v be(sat) vdc (i c = ?150 madc, i b = ?15 madc) ? 0.75 ? 0.95 (i c = ?500 madc, i b = ?50 madc) ?? ? 1.3 small?signal characteristics current?gain ? bandwidth product f t mhz (i c = ?20madc, v ce = ?10 vdc, f = 100 mhz) 200 ?? collector?base capacitance c cb pf (v cb = ?10 vdc, i e = 0, f = 1.0 mhz) ?? 8.5 emitter?base capacitance c eb pf (v be = ?0.5 vdc, i c = 0, f = 1.0 mhz) ?? 30 input impedance h ie k ? (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) 1.5 15 voltage feedback ratio h re x 10 ?4 (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) 0.1 8.0 small?signal current gain h fe ? (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) 60 500 output admittance h oe mhos (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) 1.0 100 switching characteristics delay time (v cc = ? 30 vdc, v eb = ?2.0 vdc, t d ?15 rise time i c = ?150madc, i b1 = ?15 madc) t d ?20ns storage time (v cc = ?30 vdc, i c = ?150 madc, t s ? 225 ns fall time i b1 = i b2 = ?15 madc) t f ?30 figure 3. turn?on time scope rise time < 4.0ns *total shunt capacitance of test jig connectors, and oscilloscope 1.0 k ? 30 v 200 c s *< 10 pf 1.0 k ? 30 v 200 c s * < 10 pf 1n916 ?16 v ?16 v < 20 ns <2.0 ns +2.0v + 14v figure 4. turn?off time 1.0 to 100 s, duty cycle = 2% switching time equivalent test circuits (q2 pnp) 0 0 1.0 to 100 s, duty cycle = 2% +4.0 v 3. pulse test: pulse width < 300 s; duty cycle < 2.0%. q2(pnp) rev.o 4/11 lmbt4413dw1t1g ;s-lmbt4413dw1t1g
leshan radio comp any, ltd. transient characteristics (q1 npn) i c , collec t or current (ma) figure 6. charge data reverse vo l t age (vo l ts) figure 5. capacitance v cc = 30 v i c / i b = 10 q t t j = 25c t j = 100c c obo c cb q a 1 0 2 0 3 0 5 0 7 0 100 200 300 500 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 1 0 2 0 3 0 5 0 30 20 10 7.0 5.0 3.0 2.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 q, charge (pc) ca p aci t ance (pf) t , time (ns) t , rise time (ns) v cc = 30v i c /i b =10 t r @v cc =30v t r @v cc =10v t d @v eb =2.0v t d @v eb =0v i c /i b = 10 1 0 2 0 3 0 5 0 7 0 100 200 300 500 100 70 50 30 20 10 7.0 5.0 1 0 2 0 3 0 5 0 7 0 100 200 300 500 100 70 50 30 20 10 7.0 5.0 t r t f i c , collec t or current (ma) figure 8. rise and fall t ime i c , collec t or current (ma) figure 7. t urn?on t ime i c , collec t or current (ma) figure 10. fall t ime t f , f all time (ns) v cc = 30 v i b1 = i b2 1 0 2 0 3 0 5 0 7 0 100 200 300 500 100 70 5050 30 20 10 7.0 5.0 i c /i b = 10 i c /i b = 20 i c , collec t or current (ma) figure 9. storage t ime t f , s t orage time (ns) t s ? = t s ? 1/8 t f i b1 = i b2 i c /i b = 10 to 20 1 0 2 0 3 0 5 0 7 0 100 200 300 500 300 200 100 70 50 30 rev.o 5/11 lmbt4413dw1t1g ;s-lmbt4413dw1t1g
leshan radio comp any, ltd. q1 npn unit 1 h r e , vo l t age feedback r a tio (x 10 ?4 ) h p arameters (v ce = 10 vdc, f = 1.0 khz, t a = 25c) this group of graphs illustrates the relationship between h fe and other ?h? parameters for this series of ransistors. t o obtain these curves, a high?gain and a low?gain unit were selected from the lmbt4413dw1t1g lines, and the same units were used to develop the correspondingly numbered curves on each graph. i c , collec t or current (ma) figure 1 3. current gain i c , collec t or current (ma) figure 15. v oltage feedback ratio h fe , current gain 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 1 0 300 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 i c , collec t or current (ma) figure 14. input impedance h ie , input impedance ( k ? ) 50 20 10 5.0 2.0 1.0 0.5 i c , collec t or current (ma) figure 16. output admittance h oe , output admit t ance ( mhos) 100 50 20 10 5.0 2.0 1.0 small?signal characteristics(q1 npn) noise figure v ce = 10 vdc, t a = 25c bandwidth = 1.0 hz nf, noise figure (db) 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 1 0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 1 0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 1 0 r s , source resis t ance (k ? ) figure 12. source resistance effects nf, noise figure (db) f = 1.0 khz 0.0 1 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 1 0 2 0 5 0 10 0 10 8.0 6.0 4.0 2.0 0 50 0 10 0 20 0 50 0 1.0k 2.0k 5.0k 10 k 20 k 50 k 100k f , frequency (khz) figure 11. frequency effects i c = 50 a i c = 100 a i c = 500 a i c = 1.0 ma i c = 1.0 ma, r s = 150 ? i c = 500 a, r s = 200 ? i c = 100 a, r s = 2.0 k ? i c = 50 a, r s = 4.0 k ? r s = optimum rs = source rs = resistance 10 8.0 6.0 4.0 2.0 0 q1 npn unit 2 q1 npn unit 1 q1 npn unit 2 q1 npn unit 1 q1 npn unit 2 q1 npn unit 1 q1 npn unit 2 rev.o 6/11 lmbt4413dw1t1g ;s-lmbt4413dw1t1g
leshan radio com p an y , ltd. s t a tic characteristics (q1 npn) i c , collec t or current (ma) figure 17. dc current gain i b , base current (ma) figure 18. collector saturation region i c , collec t or current (ma) figure 17. ?on? v oltages i c , collec t or current (ma) figure 20. t emperature coefficients h fe , normalized current gain v ce , collec t or emitter vo l t age (vo l ts) i c =1.0 ma t j = 125c v ce = 1.0 v v ce =10 v 25c ?55c 10 ma t j = 25c 100ma 500ma 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 1 0 2 0 3 0 5 0 7 0 10 0 2 0 30 0 50 0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 1 0 2 0 3 0 5 0 1.0 0.8 0.6 0.4 0.2 0 v , vo l t age ( vo l ts ) coefficient (mv/ c) t j = 25c vc for v ce(sat) v be(sat) @ i c /i b =10 v ce(sat) @ i c /i b =10 v be @ v ce =1.0 v vb for v be 0.1 0.2 0.5 1.0 2.0 5.0 1 0 2 0 5 0 10 0 20 0 50 0 10 0.8 0.6 0.4 0.2 0 +0.5 0 ? 0.5 ?1.0 ?1.5 ?2.0 ? 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 rev.o 7/11 lmbt4413dw1t1g ;s-lmbt4413dw1t1g
leshan radio com p an y , ltd. typical transient characteristics (q2 pnp) i c , collector current (ma) figure 4. charge data reverse voltage (volts) figure 3. capacitance v cc = 30 v i c / i b = 10 q t t j = 25c t j = 100c c eb c cb q a 10 20 30 50 70 100 200 300 500 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 30 20 10 7.0 5.0 3.0 2.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 capacitance (pf) t , time (ns) t r , rise time (ns) v cc = 30v i c / i b =10 t r @v cc =30v t r @v cc =10v t d @v be(off) = 2.0v t d @v be(off) = 0v i c /i b = 10 10 20 30 50 70 100 200 300 500 100 70 50 30 20 10 7.0 5.0 10 20 30 50 70 100 200 300 500 100 70 50 30 20 10 7.0 5.0 i c , collector current (ma) figure 6. rise time i c , collector current (ma) figure 5. turn?on time i c , collector current (ma) figure 7. storage time t s , rise time (ns) t s ? = t s ? 1/8 t f i b1 = i b2 10 20 30 50 70 100 200 300 500 200 100 70 50 30 20 i c /i b = 10 i c /i b = 20 q, charge (nc) rev.o 8/11 lmbt4413dw1t1g ;s-lmbt4413dw1t1g
leshan radio com p an y , ltd. q2 pnp unit 1 h re , voltage feedback ratio (x 10 ?4 ) h parameters (v ce = ?10 vdc, f = 1.0 khz, t a = 25c) this group of graphs illustrates the relationship between h fe and other ?h? parameters for this series of ransistors. to obtain these curves, a high?gain and a low?gain unit were selected from the lmbt4413dw1t1g lines, and the same units were used to develop the correspon dingly numbered curves on each graph. i c , collector current (madc) figure 10. current gain i c , collector current (madc) figure 12. voltage feedback ratio h fe , current gain 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 1000 700 500 300 200 100 70 50 30 20 10 5.0 2.0 1.0 0.5 0.2 0.1 i c , collector current (madc) figure 11. input impedance h ie , input impedance (k ? ) 100 50 20 10 5 2 1 0.5 0.2 0.1 i c , collector current (madc) figure 13. output admittance h oe , output admittance ( mhos) 500 100 50 20 10 5.0 2.0 1.0 small?signal characteristics (q2 pnp) noise figure v ce = ?10 vdc, t a = 25c bandwidth = 1.0 hz nf, noise figure (db) 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 r s , source resistance ( ? ) figure 9. source resistance effects nf, noise figure (db) f = 1.0 khz 0.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 10 8 6 4 2 0 50 100 200 500 1k 2k 5k 10k 20k 50k 10 8 6 4 2 0 f , frequency (khz) figure 8. frequency effects i c = 50 a 100 a 500 a 1.0 ma i c = 1.0 ma, r s = 430 ? i c = 500 a, r s = 560 ? i c = 50 a, r s = 2.7k ? i c = 100 a, r s = 1.6 k ? r s = optimum source resistance q2 pnp unit 2 q2 pnp unit 1 q2 pnp unit 2 q2 pnp unit 1 q2 pnp unit 2 q2 pnp unit 1 q2 pnp unit 2 rev.o 9/11 lmbt4413dw1t1g ;s-lmbt4413dw1t1g
leshan radio com p an y , ltd. static characteristics (q2 pnp) i c , collector current (ma) figure 14. dc current gain i b , base current (ma) figure 15. collector saturation region i c , collector current (ma) figure 16. ?on? voltages i c , collector current (ma) figure 17. temperature coefficients h fe , normalized current gain v ce , collector emitter voltage (volts) i c =1.0 ma t j = 125c v ce = 1.0 v v ce = 10 v 25c ?55c 10 ma 100ma 500ma 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 300 500 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.8 0.6 0.4 0.2 0 v, voltage ( volts ) coefficient (mv/ c) t j = 25c vc for v ce(sat) v be(sat) @ i c /i b =10 v ce(sat) @ i c /i b =10 v be @ v ce =1.0 v vs for v be 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 10 0.8 0.6 0.4 0.2 0 + 0.5 0 ? 0.5 ?1.0 ?1.5 ?2.0 ? 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 rev.o 10/11 lmbt4413dw1t1g ;s-lmbt4413dw1t1g
leshan radio comp any, ltd. notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b?01 obsolete, new standard 419b?02. e 0.2 (0.008) mm 12 3 d e a1 a a3 c l 65 4 ?e? b 6 pl xx m xx = specific device code m = date code generic marking diagram* 1 6 sc?88 dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e xx 1 6 m or h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 rev.o 11/11 lmbt4413dw1t1g ;s-lmbt4413dw1t1g

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